BUZ11: N-Channel Power MOSFET 50V, 30A, 40mΩ

This is an N-Channel enhancement mode silicon gate powerfield effect transistor designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.Formerly developmental type TA9771.

Features

• 30A, 50V
• r_DS(ON)= 0.040Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Application Notes