FCD900N60Z: N-Channel SuperFET® II MOSFET 600 V, 4.5 A, 900 mΩ

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Features

• 650 V at T_J = 150°C
• Max. R_DS(on) = 900 mΩ
• Ultra-Low Gate Charge ( Typ. Q_g = 13 nC )
• Low Effective Output Capacitance ( Typ. C_oss.eff = 49 pF )
• 100% Avalanche Tested
• ESD Improved Capacity

Application Notes