FCH76N60NF: N-Channel SupreMOS® FRFET® MOSFET 600V, 72.8A, 38mΩ _ BDTIC a Leading Distributor in China

FCH76N60NF: N-Channel SupreMOS® FRFET® MOSFET 600V, 72.8A, 38mΩ

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

FCH76N60NF Datasheet

Features

R_DS(on) = 28.7mΩ ( Typ.) @ V_GS = 10V, I_D = 38A
Ultra low gate charge ( Typ. Q_g = 230nC )
Low effective output capacitance ( Typ. C_oss.eff = 896pF )
100% avalanche tested
RoHS compliant

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
FCH76N60NF	Full Production ROHS Compliant as of 27-Feb-2006 China RoHS	$20.52	TO-247 3L - 4.7 x 15.62 x 20.57mm, RAIL TO-247 3L Drawing Last Update: Sep 2016 TO247-3L, JEDEC OPTION AB, PACKING DRAWING Last Update: Nov 2015	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2FCH Line 376N60NF

Application Notes

AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014

AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011

AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011

AN-9010 MOSFET Basics Last Update : 09-Sep-2013

AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014

AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011

AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011

AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016

AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014

AN-9068 Gate Resistor Design Guidelines for SupreMOS® Last Update : 28-Jun-2014

MOSFET Basics Last Update : 09-Sep-2013

A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011

FRFET® in Synchronous Rectification Last Update : 28-Jun-2014

Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014

Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011

Gate Resistor Design Guidelines for SupreMOS® Last Update : 28-Jun-2014

TO-247 3L Drawing Last Update: Sep 2016

TO247-3L, JEDEC OPTION AB, PACKING DRAWING Last Update: Nov 2015

A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011

A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011

Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014

Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016

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