FCP850N80Z: N-Channel SuperFET® II MOSFET

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications.

Features

• Typ. R_DS(on) = 710 mΩ(Typ.)
• Ultra Low Gate Charge (Typ. Q_g = 22 nC)
• Low E_oss (Typ. 2.3 uJ @ 400V)
• Low Effective Output Capacitance (Typ. C_oss(eff.) = 106 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability

Application Notes