FCPF380N60: N-Channel SuperFET® II MOSFET 600V, 10.2A, 380mΩ
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Features
- 650V @TJ = 150°C
- Max. RDS(on) = 380mΩ
- Ultra low gate charge ( Typ. Qg = 30nC )
- Low effective output capacitance ( Typ. Coss.eff = 95pF )
- 100% avalanche tested
Ordering CodeProduct | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
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FCPF380N60 | Full Production
Green as of Nov 2012
China RoHS | $1.692 | TO-220F 3L
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4.7 x 10.06 x 15.87mm,
RAIL | Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2FCPF
Line 3380N60
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Application Notes
AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011AN-9010 MOSFET Basics Last Update : 09-Sep-2013AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014AN-5232 New Generation Super-Junction MOSFETs, SuperFET® II and SuperFET® II Easy Drive MOSFETs for High Efficiency and Lower Switching Noise Last Update : 28-Jun-2014