FCPF9N60NT: N-Channel SupreMOS® MOSFET 600V, 9A, 385mΩ _ BDTIC a Leading Distributor in China

FCPF9N60NT: N-Channel SupreMOS® MOSFET 600V, 9A, 385mΩ

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

FCPF9N60NT Datasheet

Features

R_DS(on) = 330mΩ ( Typ.) @ V_GS = 10V, I_D = 4.5A
Ultra low gate charge ( Typ. Q_g = 22nC )
Low effective output capacitance ( Typ. C_oss.eff = 106pF )
100% avalanche tested
RoHS compliant

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
FCPF9N60NT	Full Production Green as of Sep 2009 China RoHS	$2.16	TO-220F 3L - 4.7 x 10.06 x 15.87mm, RAIL TO-220F 3L Drawing Last Update: Feb 2017 TO220-3L, FULL PACK, STRAIGHT LEAD, PACKING DRAWING Last Update: May 2013 TO220F-3L, PACKING DRAWING Last Update: May 2013 TO220-3L FULL PACKING TUBE PACKING DRAWING Last Update: May 2013 TO220F_PACKING DRAWING Last Update: May 2013	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2FCPF Line 39N60NT
FCPF9N60NTYDTU	Full Production Green as of Nov 2012 China RoHS	$2.232	TO-220F 3L - 4.5 x 9.9 x 15.7mm, RAIL TO-220F 3L Drawing Last Update: Feb 2017 TO220-3L, FULLPACK, EIAJ SC-65, Y-FORMED LEADS, PACKING DRAWING Last Update: May 2013	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2FCPF Line 39N60NT

Application Notes

AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014

AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011

AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011

AN-9010 MOSFET Basics Last Update : 09-Sep-2013

AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014

AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011

AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011

AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016

AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014

AN-9068 Gate Resistor Design Guidelines for SupreMOS® Last Update : 28-Jun-2014

MOSFET Basics Last Update : 09-Sep-2013

A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011

FRFET® in Synchronous Rectification Last Update : 28-Jun-2014

Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014

Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011

Gate Resistor Design Guidelines for SupreMOS® Last Update : 28-Jun-2014

TO-220F 3L Drawing Last Update: Feb 2017

TO220-3L, FULL PACK, STRAIGHT LEAD, PACKING DRAWING Last Update: May 2013

TO220F-3L, PACKING DRAWING Last Update: May 2013

TO220-3L FULL PACKING TUBE PACKING DRAWING Last Update: May 2013

TO220F_PACKING DRAWING Last Update: May 2013

TO-220F 3L Drawing Last Update: Feb 2017

TO220-3L, FULLPACK, EIAJ SC-65, Y-FORMED LEADS, PACKING DRAWING Last Update: May 2013

A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011

A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011

Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014

Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016

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