FDB0300N1007L: 100 V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.

Features

• Max r_DS(on) = 3 mΩ at V_GS = 10 V, I_D = 26 A
  
• Max r_DS(on) = 4.5 mΩ at V_GS = 6 V, I_D = 20 A
  
• Fast Switching Speed
  
• Low Gate Charge
  
• High Performance Trench Technology for Extremely Low R_DS(on)
  
• High Power and Current Handling Capability
  
• RoHS Compliant
  

Application Notes