FDB035N10A: N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ _ BDTIC a Leading Distributor in China

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FDB035N10A: N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

FDB035N10A Datasheet

Features

R_DS(on) = 3.0mΩ ( Typ.)@ V_GS = 10V, I_D = 75A
Fast Switching Speed
Low Gate Charge, Q_G = 89nC ( Typ.)
High Performance Trench Technology for Extremely Low R_DS(on)
High Power and Current Handling Capability
RoHS Compliant

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
FDB035N10A	Full Production Green as of Jan 2011 China RoHS	$4.32	TO-263 2L (D2PAK) - 4.445 x 10.16 x 15.24mm, TAPE REEL TO-263 2L (D2PAK) Drawing Last Update: May 2016 TO263-2L, SURFACE MOUNT, VARIATION AB,PACKING DRAWING Last Update: Oct 2016 TO263-2L, PACKING DRAWING Last Update: May 2013 TO263_TUBE PACKING DRAWING Last Update: Jun 2013	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2FDB Line 3035N10A

Application Notes

AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014

AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011

AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011

AN-9010 MOSFET Basics Last Update : 09-Sep-2013

AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014

AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011

AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011

AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016

AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014

AN-6099 New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications Last Update : 28-Jun-2014

Datasheet: FDB035N10A.pdf















Other: Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014; Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016; New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications Last Update : 28-Jun-2014; A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011; A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011; A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011; Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014; MOSFET Basics Last Update : 09-Sep-2013; Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011; FRFET® in Synchronous Rectification Last Update : 28-Jun-2014; TO263-2L, SURFACE MOUNT, VARIATION AB,PACKING DRAWING Last Update: Oct 2016; TO263-2L, PACKING DRAWING Last Update: May 2013; TO263_TUBE PACKING DRAWING Last Update: Jun 2013; TO-263 2L (D2PAK) Drawing Last Update: May 2016

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