FDB047N10: N-Channel PowerTrench® MOSFET 100V, 164A, 4.7mΩ _ BDTIC a Leading Distributor in China

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FDB047N10: N-Channel PowerTrench® MOSFET 100V, 164A, 4.7mΩ

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

FDB047N10 Datasheet

Features

R_DS(on) = 3.9mΩ ( Typ.) @ V_GS = 10V, I_D = 75A
Fast switching speed
Low Gate Charge
High performance trench technology for extremely low R_DS(on)
High power and current handing capability
RoHS compliant

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
FDB047N10	Full Production Green as of Jun 2010 China RoHS	$3.2962	TO-263 3L (D2PAK) - 4.445 x 10.16 x 15.24mm, TAPE REEL TO-263 3L (D2PAK) Drawing Last Update: May 2016 TO263-2L, SURFACE MOUNT, VARIATION AB,PACKING DRAWING Last Update: Oct 2016 TO263-2L, PACKING DRAWING Last Update: May 2013 TO263_TUBE PACKING DRAWING Last Update: Jun 2013	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2FDB Line 3047N10

Application Notes

AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014

AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011

AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011

AN-9010 MOSFET Basics Last Update : 09-Sep-2013

AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014

AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011

AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011

AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016

AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014

Datasheet: FDB047N10.pdf














Other: Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014; Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016; A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011; A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011; A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011; Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014; MOSFET Basics Last Update : 09-Sep-2013; Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011; FRFET® in Synchronous Rectification Last Update : 28-Jun-2014; TO263-2L, SURFACE MOUNT, VARIATION AB,PACKING DRAWING Last Update: Oct 2016; TO263-2L, PACKING DRAWING Last Update: May 2013; TO263_TUBE PACKING DRAWING Last Update: Jun 2013; TO-263 2L (D2PAK) Drawing Last Update: May 2016

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