FDB86102LZ: 100V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

Features

• Max r_DS(on) = 24 mΩ at V_GS = 10 V, I_D = 8.3 A
• Max r_DS(on) = 35 mΩ at V_GS = 4.5 V, I_D = 6.8 A
• HBM ESD protection level > 6 kV typical (Note 4)
• Very low Qg and Qgd compared to competing trench technologies
• Fast switching speed
• 100% UIL Tested
• RoHS Compliant

Application Notes