FDB8896: 30V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Features

• r_DS(ON) = 5.7mΩ @ V_GS = 10V, I_D=35A
  
• r_DS(ON) = 6.8mΩ @ V_GS = 4.5V, I_D=35A
  
• High performance trench technology for extremely lowr_DS(ON)
  
• Low gate charge
  
• High power and current handling capability
  

Application Notes