FDC021N30: N-Channel PowerTrench® MOSFET

This N-Channel PowerTrench MOSFET is produced using Fairchild’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• Max r_DS(on) = 26 mΩ at V_GS = 10 V, I_D = 6.1 A
  
• Max r_DS(on) = 33 mΩ at V_GS = 4.5 V, I_D = 5.3 A
  
• High Performance Trench Technology for Extremely Low r_DS(on)
  
• High Power and Current Handling Capability in a Widely Used Surface Mount Package
  
• Fast Switching Speed
  
• RoHS Compliant
  

Application Notes