FDC2612: 200V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

• 1.1 A, 200V
  
• R_DS(on) = 725 mΩ@ V_GS = 10 V
  
• High performance trench technology for extremely low R_DS(ON)
  
• High power and current handling capability
  
• Fast switching speed
  
• Low gate charge (8nC typical)
  

Application Notes