FDC3601N: Dual N-Channel 100V Specified PowerTrench® MOSFET

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Features

• 1.0 A, 100 V
  
• R_DS(on) = 500 mΩ@ V_GS = 10 V
  
• R_DS(on) = 550 mΩ @ V_GS = 6 V
  
• Low gate charge (3.7nC typical)
  
• Fast switching speed
  
• High performance trench technology for extremely low R_DS(ON)
  
• SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8); low profile (1mm thick)
  

Application Notes