FDC365P: -35V P-Channel Power Trench® MOSFET

This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.

Features

• Max r_DS(on) = 55mΩ at V_GS = 10V, I_D = -4.2A
  
• Max r_DS(on) = 80mΩ at V_GS = -4.5V, I_D = -3.2A
  
• RoHS compliant
  

Application Notes