FDC602P: P-Channel 2.5V Specified PowerTrench® MOSFET

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

• -5.5 A, -20 V
  
• R_DS(on) = 35 mΩ @ V_GS = - 4.5V
  
• R_DS(on) = 50 mΩ @ V_GS = - 2.5V
  
• Fast switching speed
  
• High performance trench technology for extremelylow R_DS(ON)
  

Application Notes