FDC6301N: Dual N-Channel, Digital FET

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.

Features

• 25 V, 0.22 A continuous, 0.5 A Peak
  
• RDS(ON) = 5 Ω @ VGS= 2.7 V
  
• RDS(ON) = 4 Ω @ VGS= 4.5 V
  
• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V
  
• Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
  

Application Notes