FDC6327C: Dual N & P-Channel 2.5V Specified PowerTrench® MOSFET

These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.           These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Features

• N-Channel 2.7A, 20V. R_DS(on) = 0.08Ω @ V_GS = 4.5V, R_DS(on) = 0.12Ω @ V_GS = 2.5V P-Channel -1.6A, -20V.R_DS(on) = 0.17Ω @V_GS= -4.5V, R_DS(on) = 0.25Ω @ V GS = -2.5V
• Fast switching speed.
• Low gate charge.
• High performance trench technology for extremelylow R_DS(ON) .
• SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).

Application Notes