FDC6333C: 30V N & P-Channel PowerTrench® MOSFETs

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Features

• Q1 2.5 A, 30V
• R_DS(on) = 95 mΩ@ V_GS = 10 V
• R_DS(on) = 150 mΩ @ V_GS = 4.5 V
• Q2 –2.0 A, 30V.
• R_DS(on) = 150 mΩ@ V_GS = -10 V
• R_DS(on) = 220 mΩ @ V_GS = -4.5 V
• Low gate charge
• High performance trench technology for extremely low R_DS(ON)
• SuperSOT –6 package: small footprint (72% smaller thanSO-8); low profile (1mm thick).

Application Notes