FDC637BNZ: 20V N-Channel 2.5V Specified PowerTrench® MOSFET

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

Features

• Max r_DS(on) = 24mΩ at V_GS = 4.5V, I_D = 6.2A
  
• Max r_DS(on) = 32mΩ at V_GS = 2.5V, I_D = 5.2A
  
• Fast switching speed
  
• Low gate charge (8nC typical)
  
• High performance trench technology for extremely low r_DS(on)
  
• SuperSOT™¨C6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)
  
• HBM ESD protection level > 2kV typical (Note 3)
  
• Manufactured using green packaging material
  
• Halide-Free
  
• RoHS Compliant
  

Application Notes