FDC638APZ: -20V P-Channel 2.5V PowerTrench® Specified MOSFET

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance

These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion.

Features

• Max r_DS(ON) = 43mΩ at V_GS = -4.5V, I_D = -4.5A
  
• Max r_DS(ON) = 68mΩ at V_GS = -2.5V, I_D = -3.8A
  
• Low gate charge (8nC typical).
  
• High performance trench technology for extremely low r_DS(on)
  
• SuperSOT™ -6 package:small footprint (72% smaller than standard SO¨C8) low profile (1mm thick).
  
• RoHS Compliant
  
• Manufactured using Green packaging materials.
  
• Halide free
  

Application Notes