FDC640P: P-Channel 2.5V PowerTrench® Specified MOSFET

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

• -4.5 A, -20 V.
  
• R_DS(ON) = 0.053 Ω @ V_GS = -4.5 V
  
• R_DS(ON) = 0.080 Ω @ V_GS = -2.5 V
  
• Rugged gate rating ( ±12V)
  
• Fast switching speed
  
• High performance trench technology for extremelylow R_DS(ON)
  

Application Notes