FDC642P: P-Channel 2.5V Specified PowerTrench® MOSFET

This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.     These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.

Features

• Max r_DS(ON) = 65mΩ at V_GS = -4.5 V, I_D = -4.0A
  
• Max r_DS(ON) = 100mΩ at V_GS = -2.5 V, I_D = -3.2A
  
• Fast switching speed.
  
• Low gate charge (11nC typical).
  
• High performance trench technology for extremely low r_DS(ON).
  
• SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
  
• Termination is Lead-free and RoHS Compliant
  

Application Notes