FDC8601: 100V N-Channel Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Features

• Max r_DS(on) = 109 mΩat V_GS = 10 V, I_D = 2.7 A
  
• Max r_DS(on) = 176 mΩat V_GS = 6 V, I_D = 2.1 A
  
• High performance trench technology for extremely low r_DS(on)
  
• High power and current handling capability in a widely used surface mount package
  
• Fast switching speed
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes