FDD3670: 100V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

• 34 A, 100 V
  
• R_DS(ON) = 32 mΩ @ V_GS = 10 V
  
• R_DS(ON) = 35 mΩ @ V_GS = 6 V
  
• Low gate charge (57 nC typical)
  
• Fast switching speed.
  
• High performance trench technology for extremelylow R_DS(ON).
  
• High power and current handling capability.
  

Application Notes