FDD3860: 100V N-Channel PowerTrench® MOSFET

Using Fairchild's proprietary high density trench MOSFET process, this part is tailored for low rDS(on) and low Qg figure of merit and with avalanche ruggedness for a wide range of switching applications.

Features

• Max r_DS(on) = 36mΩ at V_GS = 10V, I_D = 5.9A
  
• High performance trench technology for extremely low r_DS(on)
  
• 100% UIL tested
  
• RoHS Compliant
  

Application Notes