FDD4141_F085: -40V, -12.7A, 12.3mΩ, DPAKP-Channel PowerTrench®

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.

Features

• Max r_DS(on) = 12.3mΩ at V_GS = -10V, I_D = -12.7A
• Max r_DS(on) = 18.0mΩ at V_GS = -4.5V, I_D = -10.4A
• High performance trench technology for extremely low r_DS(on)
• Qualified to AEC Q101
• RoHS Compliant