FDD5680: N-Channel PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• 38 A, 60 V.
  
• R_DS(on) = 0.021 Ω @ V_GS = 10 V
  
• R_DS(on) = 0.025 Ω @ V_GS = 6 V.
  
• Low gate charge (33nC typical).
• Fast switching speed.
• High performance trench technology for extremelylow R_DS(on).

Application Notes