FDD6612A: 30V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

Features

• 30 A, 30 V
  
• R_DS(on) = 20 mΩ @ V_GS = 10 V
  
• R_DS(on) = 28 mΩ @ V_GS = 4.5 V
  
• Low gate charge (9nC typical)
  
• Fast switching
  
• High performance trench technology for extremelylow R_DS(on)
  

Application Notes