FDFMA2P029Z: -20V Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses.

The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Features

• MOSFET
  
• Max r_DS(on) = 95mΩ at V_GS = -4.5V, I_D = -3.1A
  
• Max r_DS(on) = 141mΩ at V_GS = -2.5V, I_D = -2.5A
  
• HBM ESD protection level > 2.5kV (Note 3)
  Schottky
  
• V_F < 0.37V @ 500mA
  
• Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
  
• RoHS Compliant