FDG1024NZ: 20V Dual N-Channel PowerTrench® MOSFET

This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

Features

• Max r_DS(on) = 175 mO at V_GS = 4.5 V, I_D = 1.2 A
  
• Max r_DS(on) = 215 mO at V_GS = 2.5 V, I_D = 1.0 A
  
• Max r_DS(on) = 270 mO at V_GS = 1.8 V, I_D = 0.9 A
  
• Max r_DS(on) = 389 mO at V_GS = 1.5 V, I_D = 0.8 A
  
• HBM ESD protection level >2 kV (Note 3)
  
• Very low level gate drive requirements allowing operation in1.5 V circuits (V_GS(th) < 1 V)
  
• Very small package outline SC70-6
  
• RoHS Compliant
  

Application Notes