FDG312P: P-Channel 2.5V Specified PowerTrench® MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

Features

• -1.2 A, -20 V. R_DS(on) = 0.18 Ω @ V_GS = -4.5 V R_DS(on) = 0.25 Ω @ V_GS = -2.5 V.
• Low gate charge (3.3 nC typical).
• High performance trench technology for extremely low R_DS(ON).
• Compact industry standard SC70-6 surface mount package.
• Load switch
• Battery protection
• Power management

Application Notes