FDG332PZ: -20V P-Channel PowerTrench® MOSFET

This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.

Features

• Max r_DS(on) = 95mΩ at V_GS = -4.5V, I_D = -2.6A
  
• Max r_DS(on) = 115mΩ at V_GS = -2.5V, I_D = -2.2A
  
• Max r_DS(on) = 160mΩ at V_GS = -1.8V, I_D = -1.9A
  
• Max r_DS(on) = 330mΩat V_GS = -1.5V, I_D = -1.0A
  
• Very low level gate drive requirements allowing operationin 1.5V circuits
  
• Very small package outline SC70-6
  
• RoHS Compliant
  

Application Notes