FDG6301N_F085: 25V, 0.22A,2.6Ω, SC-70-6, Logic Level Dual N-Channel Planar

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

Features

• 25 V, 0.22 A continuous, 0.65 A peak.
• R_DS(ON) = 4 W Ω V_GS= 4.5 V,
• R_DS(ON) = 5 W ΩV_GS= 2.7 V.
• Very low level gate drive requirements allowing directoperation in 3 V circuits (V_GS(th) < 1.5 V).
• Gate-Source Zener for ESD ruggedness(>6kV Human Body Model).
• Compact industry standard SC70-6 surface mountpackage.
• Qualified to AEC Q101
• RoHS Compliant