FDG6318PZ: Dual P-Channel, Digital FET

These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital transistors and small signal MOSFETS

Features

• -0.5A, -20V
  
• R_DS(ON) = 780 mΩ @ V_GS = -4.5V
  
• R_DS(ON) = 1200 mΩ @ V_GS = -2.5V
  
• Very low level gate drive requirements allowing directoperation in 3V circuits (V_GS(TH) < 1.5V).
  
• Gate-Source Zener for ESD ruggedness (>1.4kV HumanBody Model).
  
• Compact industry standard SC-70-6 surface mountpackage.
  

Application Notes