FDG6332C: 20V N &P - Channel Power Trench® MOSFET

The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.

Features

• Q1 0.7A, 20V. R_DS(ON) = 300mΩ @ V_GS = 4.5V R_DS(ON) = 400mΩ @ V_GS = 2.5V
• Q2 -0.6A, -20V. R_DS(ON) = 420mΩ @ V_GS = -4.5V R_DS(ON) = 630mΩ @ V_GS = -2.5V
• Low gate charge
• High performance trench technology for extremely low R_DS(ON)
• SC70-60 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick)

Application Notes