FDG8842CZ: Q1:30V/Q2: -25V Complementary PowerTrench® MOSFET

These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

Features

• Max. R_DS(on) = 0.4O at V_GS = 4.5V, I_D = 0.75A
• Max. R_DS(on) = 0.5O at V_GS = 2.7V, I_D = 0.67A
• Max. R_DS(on) = 1.1O at V_GS = –4.5V, I_D = –0.41A
• Max. R_DS(on) = 1.5O at V_GS = –2.7V, I_D = –0.25A
• Very low level gate drive requirements allowing directoperation in 3V circuits(V_GS(th) <1.5V)
• Very small package outline SC70-6
• RoHS Compliant

Application Notes