FDMA1430JP: -30V Integrated P-Channel PowerTrench® MOSFET and BJT

This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable applications. It features a 50 V NPN BJT and a 30 V P-ch Trench MOSFET in the space saving MicroFET 2x2 package that offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.

Features

• Max r_DS(on) = 90 mΩ at V_GS = -4.5 V, I_D = -2.9 A
  
• Max r_DS(on) = 130 mΩ at V_GS = -2.5 V, I_D = -2.6 A
  
• Max r_DS(on) = 170 mΩ at V_GS = -1.8 V, I_D = -1.7 A
  
• Max r_DS(on) = 240 mΩ at V_GS = -1.5 V, I_D = -1 A
  
• Low profile - 0.8 mm maximum - in the new package MicroFET 2x2
  
• HBM ESD protection level > 2 kV typical (Note 3)
  
• RoHS Compliant