FDMA507PZ: -20V Single P-Channel PowerTrench® MOSFET

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-stade resistance. The MicroFET 2X2 package offers exceptional thermal perfomance for its physical size and is well suited to linear mode applications.

Features

• Max r_DS(on) = 24 mΩ at V_GS = -5 V, I_D = -7.8 A
  
• Max r_DS(on) = 25 mΩ at V_GS = -4.5 V, I_D = -7 A
  
• Max r_DS(on) = 35 mΩ at V_GS = -2.5 V, I_D = -5.5 A
  
• Max r_DS(on) = 45 mΩ at V_GS = -1.8 V, I_D = -4 A
  
• Low Profile - 0.8 mm maximum - in the package MicroFET2X2 mm
  
• HBM ESD protection level > 3.2K V typical (Note3)
  
• Free from halogenated compounds and antimony oxides
  
• RoHS Compliant
  

Application Notes