FDMA908PZ: -12V Single P-Channel PowerTrench® MOSFET

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Features

• Max r_DS(on) = 12.5 mΩ at V_GS = -4.5 V, I_D = -12 A
  
• Max r_DS(on) = 18 mΩ at V_GS = -2.5 V, I_D = -10 A
  
• Max r_DS(on) = 28 mΩ at V_GS = -1.8 V, I_D = -8 A
  
• Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
  
• HBM ESD protection level > 2.8 kV typical (Note 3)
  
• Free from halogenated compounds and antimony oxides
  
• RoHS Compliant
  

Application Notes