FDMB2307NZ: 20V Dual Common Drain N-Channel PowerTrench® MOSFET

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art MicroFET Leadframe, the FDMB2307NZ minimizes both PCB space and rS1S2(on).

Features

• Max r_S1S2(on) = 16.5 mΩ at V_GS = 4.5 V, I_D = 8 A
  
• Max r_S1S2(on) = 18 mΩat V_GS = 4.2 V, I_D = 7.4 A
  
• Max r_S1S2(on) = 21 mΩ at V_GS = 3.1 V, I_D = 7 A
  
• Max r_S1S2(on) = 24 mΩ at V_GS = 2.5 V, I_D = 6.7 A
  
• Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm
  
• HBM ESD protection level> 2 kV (Note 3)
  
• RoHS Compliant
  

Application Notes