FDMB3800N: 30V Dual N-Channel PowerTrench® MOSFET

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• Max r_DS(on) = 40mΩ at V_GS = 10V, I_D = 4.8A
  
• Max r_DS(on) = 51mΩ at V_GS = 4.5V, I_D = 4.3A
  
• Fast switching speed
  
• Low gate Charge
  
• High performance trench technology for extremely low r_DS(on)
  
• High power and current handling capability.
  
• RoHS Compliant
  

Application Notes