FDMB3900AN: 25V Dual N-Channel Power Trench® MOSFET

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where the low in-line power loss and fast switching are required.

Features

• Max r_DS(on) = 23 mΩ at V_GS = 10 V, I_D = 7.0 A
• Max r_DS(on) = 33 mΩ at V_GS = 4.5 V, I_D = 5.5 A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low r_DS(on)
• High power and current handling capability
• RoHS Compliant

Application Notes