FDMC012N03: N-Channel Power Trench® MOSFET 30 V, 1.23 mΩ

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

• Max r_DS(on) = 1.23 mΩ at V_GS = 10 V, I_D = 35 A
  
• Max r_DS(on) = 1.46 mΩ at V_GS = 4.5 V, I_D = 32 A
  
• High performance technology for extremely low r_DS(on)
  
• Termination is Lead-free
  
• RoHS Compliant
  

Application Notes