FDMC510P: -20V P-Channel PowerTrench® MOSFET

This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for RDS(ON), switching performance and ruggedness.

Features

• Max. R_DS(on) = 8.0 mΩ at V_GS = -4.5 V, I_D = -12 A
  
• Max. R_DS(on) = 9.8 mΩ at V_GS = -2.5 V, I_D = -10 A
  
• Max. R_DS(on) = 13 mΩ at V_GS = -1.8 V, I_D = -9.3 A
  
• Max. R_DS(on) = 17 mΩ at V_GS = -1.5 V, I_D = -8.3 A
  
• High-Performance Trench Technology for Extremely Low R_DS(on)
  
• High Power and Current Handling Capability in a Widely Used Surface-Mount Package
  
• 100% UIL Tested
  
• Termination is Lead-Free and RoHS Compliant
  
• HBM ESD capability level >2KV Typical
  

Application Notes