FDMC6688P: P-Channel PowerTrench® MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.

Features

• Max r_DS(on) = 6.5 mΩ at V_GS = -4.5 V, I_D = -14 A
  
• Max r_DS(on) = 9.8 mΩ at V_GS = -2.5 V, I_D = -11 A
  
• Max r_DS(on) = 20 mΩ at V_GS = -1.8 V, I_D = -9 A
  
• High performance trench technology for extremely low r_DS(on)
  
• High power and current handling capability in a widely used surface mount package
  
• Lead-free and RoHS Compliant
  

Application Notes