FDMC8321LDC: 40 V N-Channel Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Features

• Dual Cool^TM Top Side Cooling PQFN package
  
• Max r_DS(on) = 2.5 mΩ at V_GS = 10 V, I_D = 27 A
  
• Max r_DS(on) = 4.1 mΩ at V_GS = 4.5 V, I_D = 21 A
  
• High performance technology for extremely low r_DS(on)
  
• RoHS Compliant
  

Application Notes