FDMC8360LET40: N-Channel Shielded Gate Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

• Shielded Gate MOSFET Technology
• Max r_DS(on) = 2.1 mΩ at V_GS = 10 V, I_D = 27 A
  
• Max r_DS(on) = 3.1 mΩ at V_GS = 4.5 V, I_D = 22 A
  
• High Performance Technology for Extremely Low r_DS(on)
  
• Termination is Lead-free
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes