FDMC86160ET100: 100V N-Channel Power Trench® MOSFET

Features

• Extended TJ rating to 175°C
  
• Shielded Gate MOSFET Technology
  
• Max r_DS(on) = 14 mΩ at V_GS = 10 V, I_D = 9 A
  
• Max r_DS(on) = 23 mΩ at V_GS = 6 V, I_D = 7 A
  
• High performance technology for extremely low r_DS(on)
  
• Termination is Lead-free and RoHS Compliant
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Application Notes