FDMC86183: N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 47 A, 12.8 mΩ

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

• Shielded Gate MOSFET Technology
  
• Max r_DS(on) = 12.8 mΩ at V_GS = 10 V, I_D = 16 A
  
• Max r_DS(on) = 34.6 mΩ at V_GS = 6 V, I_D = 8 A
  
• 50% Lower Qrr than Other MOSFET Suppliers
  
• Lowers Switching Noise/EMI
  
• MSL1 Robust Package Design
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes